sot-23 plastic-encapsulate transistors m8550 trans istor(pnp) features power dissipation marking: y21 maximum ratings (t a =25 unless otherwise noted) symbol para meter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -6 v i c collector current -continuous -0.8 a p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol t e st condi tions min max unit collector-base breakdown voltage v (br) cbo i c = -100 a , i e =0 -40 v collector-emitter breakdown voltage v (br) ceo * i c = -1ma , i b =0 -25 v emitter-base breakdown voltage v (br) ebo i e = -100 a,i c =0 -6 v collector cut-off current i cbo v cb = -35v , i e =0 -0.1 a collector cut-off current i ceo v ce = -20v , i b =0 -0.1 a h fe(1) v ce =-1v, i c =-5ma 45 h fe(2) v ce =-1v, i c =-100ma 85 4 00 dc current gain h fe(3) v ce =-1v, i c =-800ma 40 collector-emitter saturation voltage v ce(sat) i c = -800ma, i b =-80ma -0.5 v base-emitter saturation voltage v be(sat) i c =-800ma, i b =-80ma -1.2 v transition frequency f t v ce =-6v, i c = -20ma f=30mhz 150 mhz * pulse test :pulse width 300s , duty cycle 2%. classification of h fe(2) rank l h range 85- 3 00 3 00- 4 00 sot-23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,apr,2012
-10 -100 10 100 1000 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -50 -100 -150 -200 -250 -300 -0.1 -1 -10 1 10 100 -10 -100 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 250 -1 -10 -100 -1 -10 -100 -1000 -1 -10 -100 -0.1 -1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 i c common emitter v ce =-6v t a =25 transition frequency f t (mhz) collector current i c (ma) -0.9ma -0.8ma -1ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma -0.2ma i b =-0.1ma common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) i c h fe ?? -2 v be i c ?? reverse voltage v (v) capacitance c (pf) f=1mhz i e =0/ i c =0 t a =25 static characteristic -20 c ob c ib -800 v besat ?? t a =25 -800 t a =100 common emitter v ce =-1v dc current gain h fe collector current i c (ma) -5 t a f t ?? p c ?? collector power dissipation p c (mw) ambient temperature t a ( ) =10 t a =100 t a =25 m8550 -800 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) v cb / v eb c ob / c ib ?? i c v cesat ?? i c =10 t a =25 t a =100 -2 -800 base-emitter saturation voltage v besat (v) collector current i c (ma) t a = 2 5 t a = 1 0 0 collector current i c (ma) base-emitter voltage v be (v) common emitter v ce =-1v 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,apr,2012
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